High hole concentration Mg doped a-plane GaN with MgN by metal–organic chemical vapor deposition

Materials Letters, pp. 335-338, 2015.

Cited by: 1|Bibtex|Views2|DOI:https://doi.org/10.1016/j.matlet.2014.12.072
Other Links: academic.microsoft.com|www.sciencedirect.com

Abstract:

Mg doped a-plane GaN layers with MgN interlayers were grown on r-plane sapphire substrates by metal–organic chemical vapor deposition. Nonpolar Mg doped a-plane GaN without MgN exhibited a rough surface morphology, with both various sized, and large number of faceted pits. Meanwhile, nonpolar p-type GaN layers using MgN exhibited improved...More

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