AlN/GaN Short-Period Superlattice Coherently Grown on 6H-SiC(0001) Substrates by Molecular Beam Epitaxy

ryosuke kikuchi
ryosuke kikuchi
mitsuaki kaneko
mitsuaki kaneko

APPLIED PHYSICS EXPRESS, 2012.

被引用4|引用|浏览0|DOI:https://doi.org/10.1143/APEX.5.051002
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摘要

We demonstrate the coherent growth of AlN/GaN short-period superlattice (SPSL) on 6H-SiC(0001) substrates by molecular beam epitaxy. A high-quality 5-nm-thick AlN layer was grown on SiC as a template layer, followed by the growth of AlN (12 BL)/GaN (2 BL) SPSL, which consists of 40 periods (total thickness: 140 nm). The SPSL was coherentl...更多

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