AlN/GaN Short-Period Superlattice Coherently Grown on 6H-SiC(0001) Substrates by Molecular Beam Epitaxy
APPLIED PHYSICS EXPRESS, 2012.
We demonstrate the coherent growth of AlN/GaN short-period superlattice (SPSL) on 6H-SiC(0001) substrates by molecular beam epitaxy. A high-quality 5-nm-thick AlN layer was grown on SiC as a template layer, followed by the growth of AlN (12 BL)/GaN (2 BL) SPSL, which consists of 40 periods (total thickness: 140 nm). The SPSL was coherentl...更多
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