Systematic investigation of the growth rate of β-Ga2O3(010) by plasma-assisted molecular beam epitaxy

APPLIED PHYSICS EXPRESS, 2014.

Cited by: 43|Bibtex|Views0|DOI:https://doi.org/10.7567/APEX.7.095501
Other Links: academic.microsoft.com

Abstract:

beta-Ga2O3(010) homo-epitaxial growth was performed by plasma-assisted molecular beam epitaxy. Under Ga-rich conditions and for growth temperatures above 650 degrees C, the growth rate was independent of the Ga/O ratio (>1). A high growth rate of 2.2 nm/min for beta-Ga2O3(010) was achieved by optimizing the O flux between 650 and 750 degr...More

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