Systematic investigation of the growth rate of β-Ga2O3(010) by plasma-assisted molecular beam epitaxy
APPLIED PHYSICS EXPRESS, 2014.
beta-Ga2O3(010) homo-epitaxial growth was performed by plasma-assisted molecular beam epitaxy. Under Ga-rich conditions and for growth temperatures above 650 degrees C, the growth rate was independent of the Ga/O ratio (>1). A high growth rate of 2.2 nm/min for beta-Ga2O3(010) was achieved by optimizing the O flux between 650 and 750 degr...More
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