Tailoring of SiC nanoprecipitates formed in Si

G Velisa, P Trocellier,Lionel Thome,S Vaubaillon,S Miro,Y Serruys,E Bordas,Estelle Meslin, S Mylonas, Patrice Coulon,F Lepretre, A Pilz, Laurent Beck

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms（2013）

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摘要

The SiC synthesis through single-beam of C+, and simultaneous-dual-beam of C+ & Si+ ion implantations into a Si substrate heated at 550°C has been studied by means of three complementary analytical techniques: nuclear reaction analysis (NRA), Raman, and transmission electron microscopy (TEM). It is shown that a broad distribution of SiC nanoprecipitates is directly formed after simultaneous-dual-beam (520-keV C+ & 890-keV Si+) and single-beam (520-keV C+) ion implantations. Their shape appear as spherical (average size ∼4–5nm) and they are in epitaxial relationship with the silicon matrix.

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IBAS,Nanometer-sized SiC precipitates,NRA,Raman,TEM

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