Degradation of the charge collection efficiency of an n -type Fz silicon diode subjected to MeV proton irradiation

Nicolo Barbero,J Forneris,V Grilj,Milko Jaksic,Jyrki Raisanen,Aliz Simon,N Skukan,E Vittone

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms（2015）

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摘要

•Study of charge collection efficiency degradation (CCE) in Si diode due to MeV H irradiation.•CCE evaluated by micro-IBIC using 4.5MeV Li ions to probe the damaged region.•Generation of H-donors, which perturb the electrostatic properties of the diode.

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关键词

Charge collection efficiency,Silicon,Radiation damage,IBIC

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