Cross sections and transport properties of positive ions in BF 3 plasmas
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, pp. 151-154, 2012.
Abstract:
Boron produced in plasma devices continues to be the main p-type dopant in ion implantation of semiconductor devices. Yet plasma parameters of most frequently used Boron rich gas, BF3, are not well established. Time resolved measurements of ion energy distributions in the cathode boundary [1] of a pulsed dc plasma doping system revealed p...More
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