Sa1596 Endoscopically-Placed, Satisphere™ Duodenal Insert for Treatment of Obesity - Pilot Trial With Second Generation Device

Results: Ge layer was grown on Si layer with 0.5 mm thickness by chemical vapor deposition. High performance device with low temperature process was constructed on second layer (Figure 1). The responsibility of Ge P-I-N photodiode was showed high efficiency and maximal responsibility to 640mA/W at 1550nm. Conclusion: Second Ge layer was constructed on SiO2 layer for phtodiode of the integrated chip. Ge photodiode was showed high efficiency and good responsibility. Further studies will be required for practical use of this new technique for integrated chip of gastric pacemaker. Figure 1. Diagram of forming Germanium on insulator structure