Surface morphology and optical property of thermally annealed GaN substrates
Journal of Crystal Growth, pp. 22-25, 2012.
Boule of GaN crystal was grown with 50mm diameter and 3mm thickness by hydride vapor phase epitaxy and cut using a wire saw to produce freestanding wafers. These were, mechanically polished with diamond slurry and followed with chemical mechanical polishing for final surface preparation. Surface morphology was examined by non-contact mode...More
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