Fabrication and characterization of high efficiency green nanopillar LED
Journal of Crystal Growth, pp. 332-335, 2013.
InGaN/GaN green multiple quantum well (MQW) nanopillar light emitting diodes (LEDs), ∼150nm in diameter and 700nm in height, were fabricated by inductively coupled plasma etching using a Ni self-assembled nano-size mask. 2.5- and 7-fold improvement in the photoluminescence intensity was recorded for the 515 and 543nm green LED sample, res...More
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