Fabrication and characterization of high efficiency green nanopillar LED
Journal of Crystal Growth(2013)
摘要
InGaN/GaN green multiple quantum well (MQW) nanopillar light emitting diodes (LEDs), ∼150nm in diameter and 700nm in height, were fabricated by inductively coupled plasma etching using a Ni self-assembled nano-size mask. 2.5- and 7-fold improvement in the photoluminescence intensity was recorded for the 515 and 543nm green LED sample, respectively. Since the size and the shape of both samples were similar, it is believed that the higher In content LEDs would produce more strain relaxation through the fabrication of a nanopillar.
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关键词
A1. HRXRD,A3. Epitaxial lateral overgrowth,A3. MOCVD,B2. Semipolar GaN
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