A 4.2GHz 0.3mm2 256kb Dual-V/sub cc/ SRAM Building Block in 65nm CMOS

ISSCC(2006)

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摘要
An SRAM macro, implemented in a 65nm CMOS process, uses a dual supply to maximize density while enabling the use of low voltage for the processor core. Measurements of a 256kb block show 4.2GHz operation using 29mW from 1.2V at 85degC, with core logic operating down to 0.7V and a sleep biasing scheme that autonomously compensates for PVT and aging
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关键词
low power electronics,processor core,low voltage
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