A Spatio-Temporal Defect Process Model for Competing Progressive Breakdown Modes of Ultra-Thin Gate Oxides.

Continuous downscaling of metal-oxide-semiconductor field effect transistor (MOSFET) devices has led to reliability concerns, and requires a fundamental understanding of their failure mechanisms. In particular, gate oxide breakdown is a key mechanism limiting the lifetimes of MOSFET devices. By combining stochastic defect generation processes, and the time required to construct percolation paths b...