On Relaxing Page Program Disturbance over 3D MLC Flash Memory

ICCAD, pp. 479-486, 2015.

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Other Links: dblp.uni-trier.de|dl.acm.org

Abstract:

With the rapidly-increasing capacity demand over flash memory, 3D NAND flash memory has drawn tremendous attention as a promising solution to further reduce the bit cost and to increase the bit density. However, such advanced 3D devices will suffer more intensive program disturbance, compared to 2D NAND flash memory. Especially when multi...More

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