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Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations

H. P. Lee
H. P. Lee
J. Perozek
J. Perozek
L. D. Rosario
L. D. Rosario
Can Bayram
Can Bayram

Scientific Reports, Volume 6, 2016, Pages 37588

Cited by: 13|Bibtex|Views3|DOI:https://doi.org/doi:10.1038/srep37588
WOS NATURE
Other Links: academic.microsoft.com

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