A Nonlinear Surface-Field Compact Model for Junctionless Nanowire MOSFETs

Hong Chuyang,Yang Libo,Cheng Qi,Han Ting,Kuo, James B.,Chen Yijian

2016 IEEE Workshop on Microelectronics and Electron Devices (WMED)（2016）

引用 3|浏览22

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摘要

A nonlinear surface-field-based model for heavily doped JL nanowire MOSFETs is developed. By introducing two specific transformation variables, the surface potential to the field (due to the mobile charge) are correlated by a simple algebraic relation. Without solving the electrostatic potential, a drain current model is derived by the Pao-Sah integral. A second-order correction is carried out to improve the model accuracy.

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关键词

nonlinear surface-field compact model,junctionless nanowire MOSFET,electrostatic potential,drain current model,Pao-Sah integral

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