Nonvolatile Spintronic Memory Array Performance Benchmarking Based on Three-Terminal Memory Cell

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, pp. 10-17, 2017.

Cited by: 0|Bibtex|Views0|DOI:https://doi.org/10.1109/JXCDC.2017.2669213
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Abstract:

For the conventional spin-transfer torque random access memory, tradeoffs exist between read margin and write energy because both read and write currents pass through the same magnetic tunnel junction. To improve the read/write performance and reduce the read disturb rate, three-terminal memory cell structures are investigated and the tra...More

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