Electron Mobility In Thin In0.53ga0.47as Channel
2017 47TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC)(2017)
摘要
Channel thickness T-CH dependence of electron mobility EFF in thin In0.53Ga0.47As channels was investigated at temperatures T from 35 to 300 K using conventional parametric and pulsed I-D-measurements, including a novel technique with time resolution down to 10 ns. It is show that accurate mobility measurements can be obtained using low T and/or fast pulsed measurements, thus avoiding significant underestimations of mu(EFF) due to charge trapping with slow/parametric measurements. Furthermore, annealing is demonstrated to strongly suppress charge trapping, which results in mu(EFF) = 1015 cm(2)/Vs at T-CH = 7.1 nm, carrier density N-s = 3 x 10(12) cm(-2), and T = 300 K. We demonstrate that room-temperature mu(EFF) degrades by less than 10% as T-CH is scaled from 300 nm down to 7 nm, thus indicating that there is no mobility bottleneck down to T-CH = 7 nm.
更多查看译文
关键词
III-V FETs, In0.53Ga0.47As, channel thickness, electron mobility, charge trapping
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络