High-Performance Sub-Micrometer Channel WSe2 Field-Effect Transistors Prepared Using a Flood-Dike Printing Method

Yi-Lun Hong
Yi-Lun Hong
Nai-Yun Shih
Nai-Yun Shih
Gryphon A Drake
Gryphon A Drake
Tyler Fleetham
Tyler Fleetham
Qingzhou Liu
Qingzhou Liu

ACS nano, Volume 11, Issue 12, 2017, Pages 12536-12546.

Cited by: 1|Bibtex|Views5|DOI:https://doi.org/10.1021/acsnano.7b06654
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Other Links: pubmed.ncbi.nlm.nih.gov|academic.microsoft.com

Abstract:

Printing technology has potential to offer a cost-effective and scalable way to fabricate electronic devices based on two-dimensional (2D) transition metal dichalcogenides (TMDCs). However, limited by the registration accuracy and resolution of printing, the previously reported printed TMDC field-effect transistors (FETs) have relatively ...More

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