High-Performance Sub-Micrometer Channel WSe2 Field-Effect Transistors Prepared Using a Flood-Dike Printing Method
ACS nano, Volume 11, Issue 12, 2017, Pages 12536-12546.
Printing technology has potential to offer a cost-effective and scalable way to fabricate electronic devices based on two-dimensional (2D) transition metal dichalcogenides (TMDCs). However, limited by the registration accuracy and resolution of printing, the previously reported printed TMDC field-effect transistors (FETs) have relatively ...More
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