Optimization of Au-Free Ohmic Contact Based on the Gate-First Double-Metal AlGaN/GaN MIS-HEMTs and SBDs Process
IEEE Transactions on Electron Devices(2018)
摘要
The compatibility of Au-free (Ti/Al/Ti/TiN) ohmic contacts in the gate-first double-metal (GFDM) process for AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) and Schottky barrier diodes (SBDs) on the same 150-mm wafer was investigated and discussed for the first time, including contact pretreatments, Al diffusion in dielectric layers, and vias (contact windows...
更多查看译文
关键词
Ohmic contacts,Silicon,Logic gates,Aluminum gallium nitride,Wide band gap semiconductors,Gallium nitride
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要