A 0.18 μ m high-voltage area efficient integrated gate driver for piston engine fuel injection control SoC

This paper presents a three-channel, which are low-side driver (LS), battery high-side driver (LVHS) and booster high-side driver (HVHS), area efficient integrated gate driver with Schmitt-triggered input for piston engine fuel injection control SoC. The gate driver is implemented in 0.18 μ m BCD process and can achieve a switching frequency higher than 200KHz and work at 75V floating channel voltage for bootstrap operation. Narrow pulses are used to drive high-voltage level shifter, thus reducing system power consumption, while improving the life of high-voltage NMOS transistors. By adopting an innovated new bootstrap circuit structure, area of the gate driver output drive stage is reduced by 40% compared to the conventional one. The bootstrap capacitor is integrated on chip to reduce cost and improve reliability.