80-kb Logic Embedded High-K Charge Trap Transistor-Based Multi-Time-Programmable Memory With No Added Process Complexity.

Balaji Jayaraman,Derek Leu,Janakiraman Viraraghavan,Alberto Cestero,Ming Yin,John Golz,Rajesh Reddy Tummuru,Ramesh Raghavan,Dan Moy,Thejas Kempanna,Faraz Khan,Toshiaki Kirihata,Subramanian S. Iyer

IEEE Journal of Solid-State Circuits（2018）

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摘要

This paper describes the design and implementation of an 80-kb logic-embedded non-volatile multi-time programmable memory (MTPM) with no added process complexity. Charge trap transistors (CTTs) that exploit charge trapping and de-trapping behavior in high-K dielectric of 32-/22-nm Logic FETs are used as storage elements with logic-compatible programming voltages. A high-gain slew-sense amplifier (...

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关键词

Programming,Nonvolatile memory,Logic gates,High-k dielectric materials,Dielectrics,FinFETs

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