An Exploration of Applying Gate-Length-Biasing Techniques to Deeply-Scaled FinFETs Operating in Multiple Voltage Regimes

IEEE Transactions on Emerging Topics in Computing, pp. 172-183, 2018.

Cited by: 6|Views10
EI WOS

Abstract:

With the aggressive downscaling of process technologies and the importance of batterypowered systems, reducing leakage power consumption has become a crucial design challenge for IC designers. In addition, the traditional bulk CMOS technologies face significant challenges related to short-channel effects and process variations. FinFET dev...More

Code:

Data:

Get fulltext within 24h
Bibtex
Upload PDF

1.Your uploaded documents will be check within 24h, and coins will be credited to your account.

2.As the current system does not support cash withdrawal, you can add staff WeChat (AMxiaomai) to receive it as a red packet.

3.10 coins will be exchanged for 1 yuan.

?

Upload a single paper

for 5 coins

Wechat's Red Packet
?

Upload 50 articles

for 250 coins

Wechat's Red Packet
?

Upload 200 articles

for 1000 coins

Wechat's Red Packet
?

Upload 500 articles

for 2500 coins

Wechat's Red Packet
?

Upload 1000 articles

for 5000 coins

Wechat's Red Packet
Your rating :
0

 

Tags
Comments