Enhancing the Electrical Uniformity and Reliability of the HfO2-Based RRAM Using High- Permittivity Ta2O5 Side Wall

Yuan Mei,Tseng Yi-Ting,Chen Po-Hsun,Shih Chih-Cheng,Huang Hui-Chun,Chang Ting-Chang,Cui Xiaole,Lin Xinnan,Zhang Shengdong,Zhou Hang

IEEE Journal of the Electron Devices Society（2018）

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摘要

In conventional HfO2-based resistive random access memory (RRAM), SiO2 is usually adopted as side wall spacer (low-k spacer) to define the device feature size. It is found that the forming voltage of the conventional HfO2 RRAM with SiO2 spacer rises when the device size is scaling down from 16.0 μm2 to 0.16 μm2, which is detrimental for application of high density HfO2-based RRAM. In this study, a...

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关键词

High-k dielectric materials,Hafnium compounds,Electric fields,Random access memory,Switches,Electrodes,Insulation

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