Design of hybrid memristor-MOS XOR and XNOR logic gates
2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)(2017)
摘要
Two hybrid memristor-MOS exclusive OR (XOR) and exclusive NOR (XNOR) logic gates based on Memristor Ratioed Logic (MRL) are presented. The proposed gates present logic states with voltages, and implement the logic operation within one clock cycle. The designs ease the voltage degradation problem of the original MRL logic gates, while consuming fewer area overhead and less delay than their counterparts.
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关键词
memristor,MRL,XOR gate,XNOR gate
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