Advances Of The Development Of A Ferroelectric Field-Effect Transistor On Ge(001)

Patrick Ponath,Agham B. Posadas,Yuan Ren,Xiaoyu Wu,Keji Lai,Alex Demkov,Michael Schmidt,Ray Duffy,Paul Hurley,Jian Wang,Chadwin Young,Rama K. Vasudevan,M. Baris Okatan,S. Jesse,Sergei V. Kalinin

2017 IEEE INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT)（2017）

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摘要

Here we report the recent advances towards the ferroelectric field-effect on Ge(001). We will demonstrate carrier density modulation in the underlying Ge(001) substrate by switching the ferroelectric polarization in the epitaxial c-axis-oriented BaTiO3 on Ge. Recent results of patterning BaTiO3 for device applications and electrical properties of Pt/BTO/Ge heterostructures will be addressed.

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关键词

Non-volatile memory device,ferroelectric field-effect transistor,Germanium,ferroelectricity,BaTiO3

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