Evaluation Of Sram V-Min Shift Induced By Random Telegraph Noise (Rtn): Physical Understanding And Prediction Method

In this paper, the minimum operation voltage (V-min) shifts of static random access memory (SRAM) induced by random telegraph noises (RTN) are extracted from accurate transient simulation results, including the impacts of both strong and weak coupling RTNs. The turning point observed in the relation between the SRAM bitcell V-min shift and RTN amplitude is explained with the help of the newly-defined discrepancy. Based on the extracted statistical failure probabilities in all bitcells, a new prediction method for RTN induced V-min shift of SRAM array is proposed, including the interaction with process variation, which indicates that the V-min shift is actually underestimated by traditional expectation. In addition, the RTN and process variation are found to be the dominate influence factors on V-min shift under lower and higher V-DD, respectively. The results provide accurate evaluation on the impacts of RTN and process variation on SRAM and are helpful for robust SRAM design in nanoscale technology.