High-output lead-free flexible piezoelectric generator using single-crystalline GaN thin film.
ACS applied materials & interfaces(2018)
摘要
Piezoelectric generators (PEGs) are a promising power source for future self-powered electronics by converting ubiquitous ambient mechanical energy into electricity. However, most of the high-output PEGs are made from lead zirconate titanate (PZT), in which the hazardous lead could be a potential risk to both the human and environment, limiting their real applications. III-nitride (III-N) can be a potential candidate to make stable, safe, and efficient PEGs, due to its high chemical stability and piezoelectricity. Also, PEGs are preferred to be flexible rather than rigid, in order to better harvest the low-magnitude mechanical energy. Herein, a high-output, lead-free flexible PEG (F-PEG) is made from GaN thin film by transferring a single-crystalline epitaxial layer from silicon substrate to a flexible substrate. The output voltage, current density, and power density can reach 28 V, 1 µA·cm-2, and 6 µW·cm-2, respectively, by bending the F-PEG. The generated electric power by human finger bending is high enough to light commercial visible LEDs and charge commercial capacitors. The output performance keeps higher than 95% of its original value after 10,000-cycle test. This highly stable, high-output, and lead-free GaN thin-film F-PEG has the great potential for future self-powered electronic devices and systems.
更多查看译文
关键词
flexible,III-nitride,thin film,piezoelectric,generator
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络