Nanoscale Positioning of Single-Photon Emitters in Atomically Thin WSe2.

ADVANCED MATERIALS(2016)

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摘要
Single-photon emitters in monolayer WSe2 are created at the nanoscale gap between two single-crystalline gold nano rods. The atomically thin semiconductor conforms to the metal nanostructure and is bent at the position of the gap. The induced strain leads to the formation of a localized potential well inside the gap. Single-photon emitters are localized there with a precision better than 140 nm.
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关键词
atomically thin semiconductors,nanogaps,single-photon emitters,strain engineering,super-localization microscopy
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