Electron Scattering via Interface Optical Phonons with High Group Velocity in Wurtzite GaN-based Quantum Well Heterostructure

Kihoon Park
Kihoon Park
Ahmed Mohamed
Ahmed Mohamed

Scientific reports, Volume 8, Issue 1, 2018, Pages 15947

Cited by: 0|Bibtex|Views1|DOI:https://doi.org/10.1038/s41598-018-34441-4
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Other Links: pubmed.ncbi.nlm.nih.gov|academic.microsoft.com

Abstract:

Here we present a detailed theoretical analysis of the interaction between electrons and optical phonons of interface and confined modes in a wurtzite AlN/GaN/AlN quantum well heterostructure based on the uniaxial dielectric continuum model. The formalism describing the interface and confined mode optical phonon dispersion relation, elect...More

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