Scattering Mechanisms in Inversion Layers of Ge MOSFETs: Impact of Surface States and Carrier Effective Masses

2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)（2018）

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摘要

The physical origins resulting in the high N s mobility reduction in Ge MOSFETs have been examined. It is found that the surface states and the increase of carrier effective mass exhibit significant impact of the high N s mobility in Ge channels.

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关键词

Germanium,MOSFET circuits,MOSFET,Effective mass,Charge carrier processes,Surface states,Logic gates

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