Improvement of the short channel effect in PMOSFETs using cold implantation

Suk Hun Lee,Se Geun Park,Seong-Hoon Jeong,Hyuck-Chai Jung,Il Gweon Kim,Dong-Ho Kang,Hyo-Jik Nam,Dae Jung Kim,Kyu Pil Lee,Joo Sun Choi,Woosuk Jung,Yongkook Park,Changhwan Choi,Jin-Hong Park

Materials Research Bulletin（2016）

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摘要

•The effect of cold-implantation was investigated in terms of dopant diffusion.•VTH roll-off, Ioff increment, and contact resistance was improved by cold-IIP.•The standby current at a short tPD was reduced effectively for the cold-IIP case.

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关键词

A. Semiconductor,A. Electronic materials,D. Diffusion,D. Defect,D. Electrical properties

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