Improvement of the short channel effect in PMOSFETs using cold implantation

Materials Research Bulletin(2016)

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摘要
•The effect of cold-implantation was investigated in terms of dopant diffusion.•VTH roll-off, Ioff increment, and contact resistance was improved by cold-IIP.•The standby current at a short tPD was reduced effectively for the cold-IIP case.
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关键词
A. Semiconductor,A. Electronic materials,D. Diffusion,D. Defect,D. Electrical properties
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