Backward diodes using heavily Mg-doped GaN growth by ammonia molecular-beam epitaxy
Applied Physics Letters, pp. 0721022016.
We grew heavily Mg-doped GaN using ammonia molecular-beam epitaxy. The use of low growth temperature (740 °C) allows decreasing the incorporation of donor-like defects (u003c3 × 1017 cm−3) responsible for p-type doping compensation. As a result, a net acceptor concentration of 7 × 1019 cm−3 was achieved, and the hole concentration measure...More
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