Backward diodes using heavily Mg-doped GaN growth by ammonia molecular-beam epitaxy

Applied Physics Letters, pp. 0721022016.

Cited by: 0|Bibtex|Views1|DOI:https://doi.org/10.1063/1.4942369
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Abstract:

We grew heavily Mg-doped GaN using ammonia molecular-beam epitaxy. The use of low growth temperature (740 °C) allows decreasing the incorporation of donor-like defects (u003c3 × 1017 cm−3) responsible for p-type doping compensation. As a result, a net acceptor concentration of 7 × 1019 cm−3 was achieved, and the hole concentration measure...More

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