Collapse-free high power InAlGaN/GaN-HEMT with 3 W/mm at 96 GHz
2015 IEEE International Electron Devices Meeting (IEDM)(2015)
摘要
In this work, we demonstrated an excellent output power (Pout) density of 3.0 W/mm at 96 GHz using a novel collapse-free InAlGaN/GaN-HEMT with an 80-nm gate for a millimeter-wave amplifier. The developed devices showed basic reliability for commercial products. To eliminate the current collapse, a unique double-layer silicon nitride (SiN) passivation film that has oxidation resistance was adopted. We proved the potential of InAlGaN/GaN-HEMT using our unique device technology experimentally and analytically.
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关键词
collapse-free high power HEMT,output power density,millimeter-wave amplifier,reliability,double-layer silicon nitride passivation film,oxidation resistance,frequency 96 GHz,size 80 nm,InAlGaN-GaN,SiN
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