A new process approach for slant field plates in GaN-based high-electron-mobility transistors

Japanese Journal of Applied Physics, 2016.

Cited by: 0|Bibtex|Views0|DOI:https://doi.org/10.7567/JJAP.55.01AD02
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Abstract:

A new process approach to realize a slant field plate — a field plate (FP) gradually separated from the semiconductor surface from the gate edge toward the drain — is reported. A multistep SiCN dielectric film is used to make a sloped sidewall in the dielectric film consisting of a slant FP. The sidewall shape is controlled by the number ...More

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