A new process approach for slant field plates in GaN-based high-electron-mobility transistors

A new process approach to realize a slant field plate — a field plate (FP) gradually separated from the semiconductor surface from the gate edge toward the drain — is reported. A multistep SiCN dielectric film is used to make a sloped sidewall in the dielectric film consisting of a slant FP. The sidewall shape is controlled by the number ...More