A novel double-density, single-gate vertical channel (SGVC) 3D NAND Flash that is tolerant to deep vertical etching CD variation and possesses robust read-disturb immunity

international electron devices meeting, pp. 44-47, 2015.

Cited by: 0|Bibtex|Views18|

Abstract:

We demonstrate a novel vertical channel 3D NAND Flash architecture — SGVC. SGVC device is a single-gate, flat-channel TFT charge-trapping device with ultra-thin body. Our novel array decoding method enables a tight-pitch (25nm HP) metal BL design to fulfill the large page size (16KB for one plane) for high-performance NAND product. The SG...More

Code:

Data:

Your rating :
0

 

Tags
Comments