Design space and origin of off-state leakage in GaN vertical power diodes

international electron devices meeting, 2015.

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Abstract:

Variable-range-hopping through dislocations was identified as the main off-state leakage mechanism for GaN vertical diodes on different substrates. The behavior of leakage current for vertical devices as a function of dislocation density and electric field was derived by TCAD simulations, after careful calibration with experiments and lit...More

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