Threshold Logic With Electrostatically Formed Nanowires

IEEE Transactions on Electron Devices(2016)

引用 19|浏览12
暂无评分
摘要
The modulation of current through an electrostatically formed nanowire (EFN) is controlled by the voltage on the four input gates. The behavior of this multi-gate transistor can be interpreted as a complex four-input switching process, enabling the computation of multiple-input threshold logic functions using a single device. We have therefore created a novel threshold logic family leveraging thes...
更多
查看译文
关键词
Logic gates,Nanowires,Adders,Logic functions,Resistance,MOSFET
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要