Threshold Logic With Electrostatically Formed Nanowires
IEEE Transactions on Electron Devices(2016)
摘要
The modulation of current through an electrostatically formed nanowire (EFN) is controlled by the voltage on the four input gates. The behavior of this multi-gate transistor can be interpreted as a complex four-input switching process, enabling the computation of multiple-input threshold logic functions using a single device. We have therefore created a novel threshold logic family leveraging thes...
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关键词
Logic gates,Nanowires,Adders,Logic functions,Resistance,MOSFET
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