Picosecond laser texturization of mc-silicon for photovoltaics: A comparison between 1064 nm, 532 nm and 355 nm radiation wavelengths

•Self-organized surface structures were produced by picosecond laser pulses on mc-Si.•Three laser wavelengths were used which effectively reduce Si reflectivity up to 8%.•The subsurface damage induced by the three lasers was studied in detail.•μ-Raman, PL and TEM proved that UV laser provides the lowest subsurface damage.•UV laser induced damage is located above the depletion region of the p–n junction.