The Physical Mechanism Of Dispersion Caused By Algan/Gan Buffers On Si And Optimization For Low Dispersion

Steve Stoffels,Ming Zhao,Rafael Venegas,Prem Kumar Kandaswamy,Shuzhen You,T. Novak,Yoga Saripalli,M. Van Hove,Stefaan Decoutere

2015 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)（2015）

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摘要

In this paper a measurement methodology, using a two-dimensional electron gas (2DEG) resistor, is used to evaluate the dispersion of three different type of buffers, namely a step graded buffer, a buffer with low temperature (LT) AlN interlayers and a superlattice buffer. Together with a dedicated Design of Experiments (DOE), these measurements allowed us to identify the physical origin of the dispersion and identify the key parts of the buffer which influence the buffer-induced dispersion of the 2DEG.

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关键词

dispersion physical mechanism,measurement methodology,two-dimensional electron gas resistor,2DEG resistor,step-graded buffer,low-temperature aluminium nitride interlayer buffer,superlattice buffer,design of experiments,DOE,buffer-induced dispersion,AlGaN-GaN,AlN

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