Advanced power electronic devices based on Gallium Nitride (GaN)

international electron devices meeting, 2015.

Cited by: 0|Bibtex|Views3|DOI:https://doi.org/10.1109/IEDM.2015.7409713
Other Links: academic.microsoft.com

Abstract:

It is the most exciting time for power electronics in decades. The combination of new applications, such as microinverters, electric vehicles and solid state lighting, with the new opportunities brought by wide bandgap semiconductors is expected to significantly increase the reach and impact of power electronics. This paper describes some...More

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