Some Useful Relations for Analyzing Nanoscale MOSFETs Operating in the Linear Region

arXiv: Mesoscale and Nanoscale Physics, 2016.

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Abstract:

Several equations used to model and characterize the linear region IV characteristics of nanoscale field-effect transistors are derived. The meaning of carrier mobility at the nanoscale is discussed by defining two related quantities, the apparent mobility and the ballistic mobility. The validity of Matthiessenu0027s Rule for relating the...More

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