Enhanced light extraction efficiency of GaN-based light-emittng diodes by nitrogen implanted current blocking layer

Yong Deok Kim,Seung Kyu Oh,Min Joo Park,Joon Seop Kwak

Materials Research Bulletin（2016）

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摘要

•A nitrogen implanted current-blocking layer was successfully demonstrated.•Light-extraction efficiency and radiant intensity was increased by more than 20%.•Ion implantation was successfully implemented in GaN based light-emitting diodes.

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关键词

A. Nitrides,A. Optical materials,A. Semiconductors,B. Optical properties,D. Electrical properties

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