Pattern Fidelity Improvement Of Chemo-Epitaxy Dsa Process For High Volume Manufacturing

Makoto Muramatsu,Takanori Nishi,Gen You,Yusuke Saito, Yasuyuki Ido, Kiyohito Ito, Toshikatsu Tobana, Masanori Hosoya, Weichien Chen,Satoru Nakamura,Mark Somervell,Takahiro Kitano

ALTERNATIVE LITHOGRAPHIC TECHNOLOGIES VIII(2016)

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摘要
Directed self-assembly (DSA) is one of the candidates for next generation lithography. Over the past few years, cylindrical and lamellar structures dictated by the block co-polymer (BCP) composition have been investigated for use in patterning contact holes or lines, and, Tokyo Electron Limited (TEL is a registered trademark or a trademark of Tokyo Electron Limited in Japan and / or other countries.) has presented the evaluation results and the advantages of each(-1-5).In this report, we will present the latest results regarding the defect reduction work on a model line/space system. Especially it is suggested that the defectivity of the neutral layer has a large impact on the defectivity of the DSA patterns. Also, LER/LWR reduction results will be presented with a focus on the improvements made during the etch transferring the DSA patterns into the underlayer.
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关键词
directed self-assembly,chemo-epitaxy,defect,LER/LWR
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