InGaAs HEMTs with T-gate electrodes foemed by multi-layer SiCN moldsMarkTomohiro Yoshida[0]Kengo Kobayashi[0]Tanchi OtsujiTetsuya Suemitsu[0]IEICE technical report. Electron devices, pp. 79-84, 2013.Cited by: 0|Bibtex|Views0Other Links: academic.microsoft.comCode: Data: Full Text (Upload PDF)PPT (Upload PPT)Upload PDFUpload PPTYour rating :0 TagsCommentsSubmit
