Device performance of InAlN/AlN/GaN HEMTs on free-standing GaN substrateYoshimi Yamashita,Issei Watanabe, Akira Endho,Akifumi Kasamatsu,Takashi MimuraThe Japan Society of Applied Physics(2016)引用 22|浏览6暂无评分AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要