Excellent resistance variability control of WOx ReRAM by a smart writing algorithm

symposium on vlsi technology, pp. 1-2, 2016.

Cited by: 0|Bibtex|Views23|DOI:https://doi.org/10.1109/VLSI-TSA.2016.7480501
Other Links: academic.microsoft.com

Abstract:

TMO ReRAMs, being built on defect states, are intrinsically subject to variability. In this work, cell to cell variability is studied by applying write shots with different current and voltage for Forming, SET and RESET operation, respectively. We found the keys to eliminate tail bits consist of (1) longer write pulse, (2) higher write cu...More

Code:

Data:

Your rating :
0

 

Tags
Comments