Excellent resistance variability control of WOx ReRAM by a smart writing algorithm
symposium on vlsi technology, pp. 1-2, 2016.
TMO ReRAMs, being built on defect states, are intrinsically subject to variability. In this work, cell to cell variability is studied by applying write shots with different current and voltage for Forming, SET and RESET operation, respectively. We found the keys to eliminate tail bits consist of (1) longer write pulse, (2) higher write cu...More
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