Novel hybrid 3D NAND flash memory containing vertical-gate and gate-all-around structures
2016 27TH ANNUAL SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE (ASMC), pp. 371.0-374.0, 2016.
A novel three-dimensional (3D) NAND structure containing both vertical gate (VG) framework and gate-allaround (GAA) cell structure is innovated and demonstrated. It is fabricated on alternating layers of silicon dioxide (OX) and polysilicon (PL) by using 43nm technology. To our knowledge, one of the major advantages of the novel structure...More
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