A Double-Data- Rate 2 (DDR2) Interface Phase-Change Memory with 533MB/s Read -Write Data Rate and 37.5ns Access Latency for Memory-Type Storage Class Memory Applications
international memory workshop, pp. 1-5, 2016.
For the first time, by using a novel multiple individual bank sensing/writing and a memory bank interleave design, we demonstrate a double date rate 2 (DDR2) DRAM like interface phase-change memory (PCM) for M-type storage class memory applications . The write and read bandwidth is equal to 533MB/s, and the random read latency is 37.5ns, ...More
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