Pattern dependent plasma charging effect in high aspect ratio 3D NAND architecture

2016 27TH ANNUAL SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE (ASMC), pp. 358.0-360.0, 2016.

Cited by: 0|Bibtex|Views16|DOI:https://doi.org/10.1109/ASMC.2016.7491166
Other Links: academic.microsoft.com

Abstract:

Pattern dependent charging effect is explored in this study. Due to increased film thickness in 3D NAND structure, a derivative problem-the plasma-induced charging damage is enhanced during high aspect ratio (HAR) etching. In this paper, several effective methods are demonstrated to alleviate the impact of profile distortion due to chargi...More

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