Pattern dependent plasma charging effect in high aspect ratio 3D NAND architecture
2016 27TH ANNUAL SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE (ASMC), pp. 358.0-360.0, 2016.
Pattern dependent charging effect is explored in this study. Due to increased film thickness in 3D NAND structure, a derivative problem-the plasma-induced charging damage is enhanced during high aspect ratio (HAR) etching. In this paper, several effective methods are demonstrated to alleviate the impact of profile distortion due to chargi...More
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