Cathodoluminescence study of luminescence centers in hexagonal and cubic phase GaN hetero-integrated on Si(100)
Journal of Applied Physics, pp. 0251062016.
Hexagonal and cubic GaN—integrated on on-axis Si(100) substrate by metalorganic chemical vapor deposition via selective epitaxy and hexagonal-to-cubic-phase transition, respectively—are studied by temperature- and injection-intensity-dependent cathodoluminescence to explore the origins of their respective luminescence centers. In hexagona...More
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