Cathodoluminescence study of luminescence centers in hexagonal and cubic phase GaN hetero-integrated on Si(100)

Journal of Applied Physics, pp. 0251062016.

Cited by: 0|Bibtex|Views0|DOI:https://doi.org/10.1063/1.4958335
Other Links: academic.microsoft.com

Abstract:

Hexagonal and cubic GaN—integrated on on-axis Si(100) substrate by metalorganic chemical vapor deposition via selective epitaxy and hexagonal-to-cubic-phase transition, respectively—are studied by temperature- and injection-intensity-dependent cathodoluminescence to explore the origins of their respective luminescence centers. In hexagona...More

Code:

Data:

Your rating :
0

 

Tags
Comments