Channel-Proximate Silicon-Carbon Source/Drain Stressors for Performance Boost in Strained N-Channel Field-Effect TransistorsS. M. Koh, C. M. Ng, Z. Y. Zhao,H. Maynard, N. Variam,T. Henry,Y. Erokhin,G. Samudra, Y. C. YeoThe Japan Society of Applied Physics（2009）引用 0|浏览17暂无评分AI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
